Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 {angstrom}/s
Hydrogenated amorphous-silicon (a-Si:H) is grown by hot-wire chemical vapor deposition (HWCVD) at deposition rates (R{sub d}) exceeding 140 {angstrom}/s ({approx}0.8 {mu}m/min). These high rates are achieved by using multiple filaments and deposition conditions different than those used to produce our standard 20 {angstrom}/s material. With proper deposition parameter optimization, an AM1.5 photo-to-dark-conductivity ratio of 10{sup 5} is maintained at an R{sub d} up to 130 {angstrom}/s, beyond which it decreases. In addition, the first saturated defect densities of high R{sub d} a-Si:H films are presented. These saturated defected densities are similar to those of the best HWCVD films deposited at 5--8 {angstrom}/s, and are invariant with R{sub d} up to 130 {angstrom}/s.
- Research Organization:
- Midwest Research Instute
- Sponsoring Organization:
- (US)
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 40277856
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 24; Other Information: DOI: 10.1063/1.1375008; Othernumber: APPLAB000078000024003788000001; 053121APL; PBD: 11 Jun 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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