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Title: Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys

Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys We have investigated the statistical effects of spontaneous ordering on the electronic and structural properties of a semiconductor alloy as a function of order parameter using an empirical pseudopotential method in conjunction with a valence force field method in a supercell approach. The theoretical modeling yields valuable information on the statistical fluctuation of electronic properties, which includes the individual band edge as well as the band gap, for understanding the effects of ordering on various optical and transport measurements. The results on the average bond lengths and the statistical distributions of different types of bonds provide a guideline for the measurability of the effects of ordering in a partially ordered alloy in terms of the order parameter.
Authors: ; ;
Publication Date:
OSTI Identifier:OSTI ID: 40277622
DOE Contract Number:AC03-76SF00098; AC36-99GO10337
Resource Type:Journal Article
Resource Relation:Journal Name: Physical Review B; Journal Volume: 64; Journal Issue: 12; Other Information: DOI: 10.1103/PhysRevB.64.125207; Othernumber: PRBMDO000064000012125207000001; 064136PRB; PBD: 15 Sep 2001
Research Org:Lawrence Berkeley National Laboratory
Sponsoring Org:(US)
Country of Publication:United States
Language:English
Subject: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; BOND LENGTHS; FLUCTUATIONS; ORDER PARAMETERS; RECOMMENDATIONS; TRANSPORT; VALENCE