Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process
Abstract
Reflectance-difference (RD) measurements for the oxidation of single-domain (2 x 1) -reconstructed Si(001) surfaces show that the polarity of the interface-induced optical anisotropy is reversed repeatedly with increasing oxide thickness. The oscillation of the RD amplitude, which we show is due to layer-by-layer progression of the oxidation, has allowed us to count the number of oxidized Si layers in situ during oxidation. The origins of the observed spectral line shape are discussed.
- Authors:
- Publication Date:
- Sponsoring Org.:
- (US)
- OSTI Identifier:
- 40277136
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 87; Journal Issue: 3; Other Information: DOI: 10.1103/PhysRevLett.87.037403; Othernumber: PRLTAO000087000003037403000001; 054129PRL; PBD: 16 Jul 2001; Journal ID: ISSN 0031-9007
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; OSCILLATIONS; OXIDATION; OXIDES; SHAPE; THICKNESS
Citation Formats
Yasuda, T, Yamasaki, S, Nishizawa, M, Miyata, N, Shklyaev, A, Ichikawa, M, Matsudo, T, and Ohta, T. Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process. United States: N. p., 2001.
Web. doi:10.1103/PhysRevLett.87.037403.
Yasuda, T, Yamasaki, S, Nishizawa, M, Miyata, N, Shklyaev, A, Ichikawa, M, Matsudo, T, & Ohta, T. Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process. United States. https://doi.org/10.1103/PhysRevLett.87.037403
Yasuda, T, Yamasaki, S, Nishizawa, M, Miyata, N, Shklyaev, A, Ichikawa, M, Matsudo, T, and Ohta, T. 2001.
"Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process". United States. https://doi.org/10.1103/PhysRevLett.87.037403.
@article{osti_40277136,
title = {Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process},
author = {Yasuda, T and Yamasaki, S and Nishizawa, M and Miyata, N and Shklyaev, A and Ichikawa, M and Matsudo, T and Ohta, T},
abstractNote = {Reflectance-difference (RD) measurements for the oxidation of single-domain (2 x 1) -reconstructed Si(001) surfaces show that the polarity of the interface-induced optical anisotropy is reversed repeatedly with increasing oxide thickness. The oscillation of the RD amplitude, which we show is due to layer-by-layer progression of the oxidation, has allowed us to count the number of oxidized Si layers in situ during oxidation. The origins of the observed spectral line shape are discussed.},
doi = {10.1103/PhysRevLett.87.037403},
url = {https://www.osti.gov/biblio/40277136},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 3,
volume = 87,
place = {United States},
year = {Mon Jul 16 00:00:00 EDT 2001},
month = {Mon Jul 16 00:00:00 EDT 2001}
}
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