Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique
We have studied Ga{sub x}In{sub 1-x}As{sub y}Sb{sub 1-y}/GaSb heterostructures for x=0.84 and y=0.14 using the photoacoustic technique with the heat transmission configuration. A theoretical model, which includes all the possible nonradiative recombination mechanisms that contribute to heat generation, was developed to calculate the photoacoustic signal for this type of heterostructure. The Auger recombination lifetime {tau}{sub Auger} was determined by fitting our experimental results to the calculated frequency dependence of the theoretical photoacoustic signal. The obtained value for {tau}{sub Auger} is compatible with those reported in the literature for semiconductors with band-gap energies below and above 0.5 eV, the energy region where there is a lack of experimental {tau}{sub Auger} values. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230762
- Journal Information:
- Applied Physics Letters, Vol. 79, Issue 7; Other Information: DOI: 10.1063/1.1383281; Othernumber: APPLAB000079000007000964000001; 021127APL; PBD: 13 Aug 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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