Hot-hole lasers in III--V semiconductors
Following the success of p-Ge hot-hole lasers, there is potential for using other semiconductor materials, notably III--V materials such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and light holes is advantageous, which implies that InSb would make an excellent hot-hole laser. Using our Monte Carlo simulation of both GaAs and InSb hot-hole lasers in combination with a rate equation model, we see that previously accepted criteria used to predict performance are not always reliable, and we suggest suitable alternatives. The simulation results include gain and gain bandwidth as a function of field strength and laser frequency, and alternative field orientations and photon polarizations are considered. Comparisons are made with bulk 1-Ge systems. The optimum conditions predicted by our simulation could then be used in the design of quantum-well hot-hole lasers. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230478
- Journal Information:
- Journal of Applied Physics, Vol. 90, Issue 4; Other Information: DOI: 10.1063/1.1384492; Othernumber: JAPIAU000090000004001692000001; 018116JAP; PBD: 15 Aug 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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