Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots
We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens-shaped InAs quantum dots within the ''linear combination of bulk bands'' method. We present a detailed comparison with experiment, including quantites such as the single-particle electron and hole energy level spacings, the excitonic band gap, the electron-electron, hole-hole, and electron-hole Coulomb energies and the optical polarization anisotropy. We find a generally good agreement, which is improved even further for a dot composition where some Ga has diffused into the dots.
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- Resource Type:
- Journal Article
- Resource Relation:
- Journal Name: Physical Review B; Journal Volume: 62; Journal Issue: 19; Other Information: Othernumber: PRBMDO000062000019012963000001; 046040PRB; PBD: 15 Nov 2000
- The American Physical Society
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- Country of Publication:
- United States
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY LEVELS; POLARIZATION
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