Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles
Abstract
A fabrication process, compatible with an industrial bipolar+complementary metal{endash}oxide{endash}semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n{sup +}/p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. {copyright} 2001 American Institute of Physics.
- Authors:
- Publication Date:
- Sponsoring Org.:
- (US)
- OSTI Identifier:
- 40204584
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 78; Journal Issue: 26; Other Information: DOI: 10.1063/1.1381572; Othernumber: APPLAB000078000026004154000001; 035126APL; PBD: 25 Jun 2001; Journal ID: ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANODIZATION; EFFICIENCY; ELECTROLUMINESCENCE; EYES; FABRICATION; PHYSICS
Citation Formats
Barillaro, G, Diligenti, A, Pieri, F, Fuso, F, and Allegrini, M. Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles. United States: N. p., 2001.
Web. doi:10.1063/1.1381572.
Barillaro, G, Diligenti, A, Pieri, F, Fuso, F, & Allegrini, M. Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles. United States. https://doi.org/10.1063/1.1381572
Barillaro, G, Diligenti, A, Pieri, F, Fuso, F, and Allegrini, M. 2001.
"Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles". United States. https://doi.org/10.1063/1.1381572.
@article{osti_40204584,
title = {Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles},
author = {Barillaro, G and Diligenti, A and Pieri, F and Fuso, F and Allegrini, M},
abstractNote = {A fabrication process, compatible with an industrial bipolar+complementary metal{endash}oxide{endash}semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n{sup +}/p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1381572},
url = {https://www.osti.gov/biblio/40204584},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 78,
place = {United States},
year = {Mon Jun 25 00:00:00 EDT 2001},
month = {Mon Jun 25 00:00:00 EDT 2001}
}