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Title: Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

Abstract

A fabrication process, compatible with an industrial bipolar+complementary metal{endash}oxide{endash}semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n{sup +}/p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. {copyright} 2001 American Institute of Physics.

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40204584
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 78; Journal Issue: 26; Other Information: DOI: 10.1063/1.1381572; Othernumber: APPLAB000078000026004154000001; 035126APL; PBD: 25 Jun 2001; Journal ID: ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANODIZATION; EFFICIENCY; ELECTROLUMINESCENCE; EYES; FABRICATION; PHYSICS

Citation Formats

Barillaro, G, Diligenti, A, Pieri, F, Fuso, F, and Allegrini, M. Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles. United States: N. p., 2001. Web. doi:10.1063/1.1381572.
Barillaro, G, Diligenti, A, Pieri, F, Fuso, F, & Allegrini, M. Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles. United States. https://doi.org/10.1063/1.1381572
Barillaro, G, Diligenti, A, Pieri, F, Fuso, F, and Allegrini, M. 2001. "Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles". United States. https://doi.org/10.1063/1.1381572.
@article{osti_40204584,
title = {Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles},
author = {Barillaro, G and Diligenti, A and Pieri, F and Fuso, F and Allegrini, M},
abstractNote = {A fabrication process, compatible with an industrial bipolar+complementary metal{endash}oxide{endash}semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n{sup +}/p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1381572},
url = {https://www.osti.gov/biblio/40204584}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 78,
place = {United States},
year = {Mon Jun 25 00:00:00 EDT 2001},
month = {Mon Jun 25 00:00:00 EDT 2001}
}