Detection of picosecond electrical pulses using the intrinsic Franz{endash}Keldysh effect

Lampin, J F; Desplanque, L; Mollot, F

doi:10.1063/1.1381030

Title: Detection of picosecond electrical pulses using the intrinsic Franz{endash}Keldysh effect

Full Record
Other Related Research

Abstract

We report time-resolved measurements of ultrafast electrical pulses propagating on a coplanar transmission line using the intrinsic Franz{endash}Keldysh effect. A low-temperature-grown GaAs layer deposited on a GaAs substrate allows generation and also detection of ps pulses via electroabsorption sampling (EAS). This all-optical method does not require any external sampling probe. A typical rise time of 1.1 ps has been measured. EAS is a good candidate for use in THz characterization of ultrafast devices. {copyright} 2001 American Institute of Physics.

Authors:: Lampin, J F; Desplanque, L; Mollot, F

Publication Date:: Mon Jun 25 00:00:00 EDT 2001

Sponsoring Org.:: (US)

OSTI Identifier:: 40204567

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 78; Journal Issue: 26; Other Information: DOI: 10.1063/1.1381030; Othernumber: APPLAB000078000026004103000001; 003126APL; PBD: 25 Jun 2001; Journal ID: ISSN 0003-6951

Publisher:: The American Physical Society

Country of Publication:: United States

Language:: English

Subject:: 24 POWER TRANSMISSION AND DISTRIBUTION; DETECTION; PHYSICS; POWER TRANSMISSION LINES; PULSE RISE TIME; SAMPLING; SUBSTRATES

Citation Formats


                    Lampin, J F, Desplanque, L, and Mollot, F. Detection of picosecond electrical pulses using the intrinsic Franz{endash}Keldysh effect.  United States: N. p., 2001. 
        Web.  doi:10.1063/1.1381030.

Copy to clipboard


                    Lampin, J F, Desplanque, L, & Mollot, F. Detection of picosecond electrical pulses using the intrinsic Franz{endash}Keldysh effect.  United States.  https://doi.org/10.1063/1.1381030

Copy to clipboard


                    Lampin, J F, Desplanque, L, and Mollot, F. 2001.  
        "Detection of picosecond electrical pulses using the intrinsic Franz{endash}Keldysh effect".  United States.  https://doi.org/10.1063/1.1381030.

Copy to clipboard


                    
@article{osti_40204567,

  title        = {Detection of picosecond electrical pulses using the intrinsic Franz{endash}Keldysh effect},

  author       = {Lampin, J F and Desplanque, L and Mollot, F},

  abstractNote = {We report time-resolved measurements of ultrafast electrical pulses propagating on a coplanar transmission line using the intrinsic Franz{endash}Keldysh effect. A low-temperature-grown GaAs layer deposited on a GaAs substrate allows generation and also detection of ps pulses via electroabsorption sampling (EAS). This all-optical method does not require any external sampling probe. A typical rise time of 1.1 ps has been measured. EAS is a good candidate for use in THz characterization of ultrafast devices. {copyright} 2001 American Institute of Physics.},

  doi          = {10.1063/1.1381030},

  url          = {https://www.osti.gov/biblio/40204567},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 26,

  volume       = 78,

  place        = {United States},

  year         = {Mon Jun 25 00:00:00 EDT 2001},

  month        = {Mon Jun 25 00:00:00 EDT 2001}

}

Copy to clipboard

Journal Article:

https://doi.org/10.1063/1.1381030

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Photorefractive InGaAs/GaAs multiple quantum wells in the Franz{endash}Keldysh geometry

Journal Article Iwamoto, S; Kageshima, H; Yuasa, T; ... - Journal of Applied Physics

We fabricate semi-insulating InGaAs/GaAs multiple quantum wells and observe the excitonic enhancement of the photorefractivity in the Franz{endash}Keldysh geometry at wavelengths of 0.92{endash}0.94 {mu}m. A maximum two-wave mixing gain of 138 cm{sup {minus}1} and a maximum diffraction efficiency of 1.5{times}10{sup {minus}4} are obtained. The saturation intensity and the spatial resolution are also measured by four-wave mixing. The diffraction efficiency is saturated at a high external electric field. The dominant cause of this saturation is the deviation of the excitonic electroabsorption from its quadratic law. {copyright} 2001 American Institute of Physics.
https://doi.org/10.1063/1.1370364
Quantum interference and control of the dynamic Franz-Keldysh effect: Generation and detection of terahertz space-charge fields

Journal Article Wang, Rui; Jacobs, Paul; Smirl, Arthur; ... - Applied Physics Letters

The Dynamic Franz Keldysh Effect (DFKE) is produced and controlled in bulk gallium arsenide by quantum interference without the aid of externally applied fields and is spatially and temporally resolved using ellipsometric pump-probe techniques. The {approx}3 THz internal driving field for the DFKE is a transient space-charge field that is associated with a critically damped coherent plasma oscillation produced by oppositely traveling ballistic electron and hole currents that are injected by two-color quantum interference techniques. The relative phase and polarization of the two pump pulses can be used to control the DFKE.
https://doi.org/10.1063/1.4811709
Franz-Keldysh effect in GeSn pin photodetectors

Journal Article Kostecki, K.; Schmid, M.; Kaschel, M.; ... - Applied Physics Letters

The optical properties and the Franz-Keldysh effect at the direct band gap of GeSn alloys with Sn concentrations up to 4.2% at room temperature were investigated. The GeSn material was embedded in the intrinsic region of a Ge heterojunction photodetector on Si substrates. The layer structure was grown by means of ultra-low temperature molecular beam epitaxy. The absorption coefficient as function of photon energy and the direct bandgap energies were determined. In all investigated samples, the Franz-Keldysh effect can be observed. A maximum absorption ratio of 1.5 was determined for 2% Sn for a voltage swing of 3 V.
https://doi.org/10.1063/1.4873935
Electroreflectance measurements of electric fields in ordered GaInP{sub 2}

Journal Article Perkins, J; Zhang, Y; Geisz, J; ... - Journal of Applied Physics

Ordered Ga{sub 0.52}In{sub 0.48}P alloys (GaInP{sub 2} for simplicity) grown on miscut [001] GaAs resemble monolayer superlattices with alternating Ga- and In-rich layers along either the [{bar 1}11] or [1{bar 1}1] directions. Recent calculations suggest that, in fully ordered GaInP{sub 2}, an intrinsic ordering-induced electric field of order 1600 kV/cm should exist. In partially ordered samples, as can actually be grown, the expected field is reduced to 400 kV/cm. For such a strong internal electric field, clear Franz{endash}Keldysh Oscillations (FKOs) would be expected in an electroreflectance measurement. We report electroreflectance measurements of ordered GaInP{sub 2} layers measured at T=100thinspK. Formore »« less
https://doi.org/10.1063/1.368675
Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy

Journal Article Verma, Darpan; Adnan, Md; Rahman, Mohammad; ... - Applied Physics Letters

The eXciton Franz–Keldysh (XFK) effect is observed in GaN p–n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the line shape and the local bias (V_l), uniquely determining the local electric field maximum and depletion widths. As expected, the spectrally determined values of V_l vary linearly with the applied bias (V) and reveal a large reduction in the local electric field due to electrostatic non-uniformity. The built-inmore »« less
Cited by 1
https://doi.org/10.1063/1.5144778

Full Text Available

Similar Records