Charge transport through a single tetracene grain boundary

Schon, Jan Hendrik; Kloc, Christian

doi:10.1063/1.1379986

Title: Charge transport through a single tetracene grain boundary

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Abstract

The hole transport through a single grain boundary is investigated in the temperature range from 4 to 300 K using a tetracene bicrystal. The carrier concentration is varied by the field effect. The results can be explained using the grain-boundary-trapping model. A potential barrier is formed at the grain boundary due to charged traps at the grain boundary. The barrier height depends significantly on the carrier density within the grain. At low temperatures, tunneling through the grain boundary dominates over thermionic emission over the barrier. {copyright} 2001 American Institute of Physics.

Authors:: Schon, Jan Hendrik; Kloc, Christian

Publication Date:: Mon Jun 11 00:00:00 EDT 2001

Sponsoring Org.:: (US)

OSTI Identifier:: 40204294

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 78; Journal Issue: 24; Other Information: DOI: 10.1063/1.1379986; Othernumber: APPLAB000078000024003821000001; 020125APL; PBD: 11 Jun 2001; Journal ID: ISSN 0003-6951

Publisher:: The American Physical Society

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; CHARGE TRANSPORT; PHYSICS; POTENTIALS; TETRACENE; THERMIONIC EMISSION; TRANSPORT; TUNNELING

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                    Schon, Jan Hendrik, and Kloc, Christian. Charge transport through a single tetracene grain boundary.  United States: N. p., 2001. 
        Web.  doi:10.1063/1.1379986.

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                    Schon, Jan Hendrik, & Kloc, Christian. Charge transport through a single tetracene grain boundary.  United States.  https://doi.org/10.1063/1.1379986

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                    Schon, Jan Hendrik, and Kloc, Christian. 2001.  
        "Charge transport through a single tetracene grain boundary".  United States.  https://doi.org/10.1063/1.1379986.

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@article{osti_40204294,

  title        = {Charge transport through a single tetracene grain boundary},

  author       = {Schon, Jan Hendrik and Kloc, Christian},

  abstractNote = {The hole transport through a single grain boundary is investigated in the temperature range from 4 to 300 K using a tetracene bicrystal. The carrier concentration is varied by the field effect. The results can be explained using the grain-boundary-trapping model. A potential barrier is formed at the grain boundary due to charged traps at the grain boundary. The barrier height depends significantly on the carrier density within the grain. At low temperatures, tunneling through the grain boundary dominates over thermionic emission over the barrier. {copyright} 2001 American Institute of Physics.},

  doi          = {10.1063/1.1379986},

  url          = {https://www.osti.gov/biblio/40204294},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 24,

  volume       = 78,

  place        = {United States},

  year         = {Mon Jun 11 00:00:00 EDT 2001},

  month        = {Mon Jun 11 00:00:00 EDT 2001}

}

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