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Title: Meyer{endash}Neldel rule for dark current in charge-coupled devices

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.1372365· OSTI ID:40204246

We present the results of a systematic study of the dark current in each pixel of a charged-coupled device chip. It was found that the Arrhenius plot, at temperatures between 222 and 291 K, deviated from a linear behavior in the form of continuous bending. However, as a first approximation, the dark current, D, can be expressed as: D=D{sub 0}exp({minus}{Delta}E/kT), where {Delta}E is the activation energy, k is Boltzmann{close_quote}s constant, and T the absolute temperature. It was found that {Delta}E and the exponential prefactor D{sub 0} follow the Meyer{endash}Neldel rule (MNR) for all of the more than 222,000 investigated pixels. The isokinetic temperature, T{sub 0}, for the process was found as 294 K. However, measurements at 313 K did not show the predicted inversion in the dark current. It was found that the dark current for different pixels merged at temperatures higher than T{sub 0}. A model is presented which explains the nonlinearity and the merging of the dark current for different pixels with increasing temperature. Possible implications of this finding regarding the MNR are discussed. {copyright} 2001 American Institute of Physics.

Sponsoring Organization:
(US)
OSTI ID:
40204246
Journal Information:
Journal of Applied Physics, Vol. 89, Issue 12; Other Information: DOI: 10.1063/1.1372365; Othernumber: JAPIAU000089000012008179000001; 087112JAP; PBD: 15 Jun 2001; ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English

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