The role of interfaces in the magnetoresistance of Au/Fe/Au/Fe/GaAs(001)
The electron transport and magnetoresistance (MR) were investigated in high quality crystalline epitaxial Fe(001) and Au(001) films and exchange coupled Au/Fe/Au/Fe/GaAs(001) trilayer structures. Fits to the experimental data were based on the semiclassical Boltzmann equation, which incorporates the electronic properties obtained from first-principles local density functional calculations. The fits require a surprisingly high asymmetry for the spin dependent electron lifetimes in Fe, {tau}{sup {down_arrow}}/{tau}{sup {up_arrow}}=10 at room temperature. Despite the large atomic terraces at the Au/vacuum and Fe/GaAs interfaces the scattering at the outer interfaces was found to be diffuse. The origin of MR in Au/Fe/Au/Fe/GaAs(001) structures is due to electron channeling in the Au spacer layer. The measured MR is consistent with the diffusivity parameters s{sup {up_arrow}}=0.55, s{sup {down_arrow}}=0.77 at the metal{endash}metal interfaces. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203972
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1357844; Othernumber: JAPIAU000089000011007110000001; 309111MMM; PBD: 1 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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