Ion peening and stress relaxation induced by low-energy atom bombardment of covalent solids
Journal Article
·
· Physical Review B
Using molecular-dynamics simulation, we study the buildup and relaxation of stress induced by low-energy ({le}150 eV) atom bombardment of a target material. The effect is brought out most clearly by using an initially compressed specimen. As target material, we employ Si, based on the Tersoff potential. By varying the bond strength in the potential, we can specifically study its effect on damage production and stress changes. We find that in general, stress is relaxed by the atom bombardment; only for low bombarding energies and strong bonds, atom bombardment increases stress. We rationalize this behavior by considering the role of energized atoms and of recoil-implanted target atoms.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203494
- Journal Information:
- Physical Review B, Vol. 63, Issue 22; Other Information: DOI: 10.1103/PhysRevB.63.224111; Othernumber: PRBMDO000063000022224111000001; 091122PRB; PBD: 1 Jun 2001; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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