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Title: Molecular random access memory cell

Abstract

Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times {gt}15 min have been observed. {copyright} 2001 American Institute of Physics.

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40203210
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 78; Journal Issue: 23; Other Information: DOI: 10.1063/1.1377042; Othernumber: APPLAB000078000023003735000001; 051122APL; PBD: 4 Jun 2001; Journal ID: ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; MEMORY DEVICES; PHYSICS; RETENTION; ELECTRONIC EQUIPMENT

Citation Formats

Reed, M A, Chen, J, Rawlett, A M, Price, D W, and Tour, J M. Molecular random access memory cell. United States: N. p., 2001. Web. doi:10.1063/1.1377042.
Reed, M A, Chen, J, Rawlett, A M, Price, D W, & Tour, J M. Molecular random access memory cell. United States. https://doi.org/10.1063/1.1377042
Reed, M A, Chen, J, Rawlett, A M, Price, D W, and Tour, J M. 2001. "Molecular random access memory cell". United States. https://doi.org/10.1063/1.1377042.
@article{osti_40203210,
title = {Molecular random access memory cell},
author = {Reed, M A and Chen, J and Rawlett, A M and Price, D W and Tour, J M},
abstractNote = {Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times {gt}15 min have been observed. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1377042},
url = {https://www.osti.gov/biblio/40203210}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 78,
place = {United States},
year = {Mon Jun 04 00:00:00 EDT 2001},
month = {Mon Jun 04 00:00:00 EDT 2001}
}