Molecular random access memory cell
Abstract
Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times {gt}15 min have been observed. {copyright} 2001 American Institute of Physics.
- Authors:
- Publication Date:
- Sponsoring Org.:
- (US)
- OSTI Identifier:
- 40203210
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 78; Journal Issue: 23; Other Information: DOI: 10.1063/1.1377042; Othernumber: APPLAB000078000023003735000001; 051122APL; PBD: 4 Jun 2001; Journal ID: ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; MEMORY DEVICES; PHYSICS; RETENTION; ELECTRONIC EQUIPMENT
Citation Formats
Reed, M A, Chen, J, Rawlett, A M, Price, D W, and Tour, J M. Molecular random access memory cell. United States: N. p., 2001.
Web. doi:10.1063/1.1377042.
Reed, M A, Chen, J, Rawlett, A M, Price, D W, & Tour, J M. Molecular random access memory cell. United States. https://doi.org/10.1063/1.1377042
Reed, M A, Chen, J, Rawlett, A M, Price, D W, and Tour, J M. 2001.
"Molecular random access memory cell". United States. https://doi.org/10.1063/1.1377042.
@article{osti_40203210,
title = {Molecular random access memory cell},
author = {Reed, M A and Chen, J and Rawlett, A M and Price, D W and Tour, J M},
abstractNote = {Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times {gt}15 min have been observed. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1377042},
url = {https://www.osti.gov/biblio/40203210},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 78,
place = {United States},
year = {Mon Jun 04 00:00:00 EDT 2001},
month = {Mon Jun 04 00:00:00 EDT 2001}
}
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