Development of a cluster tool and analysis of deposition of silicon oxide by TEOS/O{sub 2} PECVD

Book · Sun Dec 01 00:00:00 EST 1996

OSTI ID:400670

Morimoto, N I ^[1]; Swart, J W ^[2]

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1. LSI/PEE/EPUSP, Sao Paulo (Brazil)
2. DSIF/FEE/UNICAMP, Campinas, Sao Paulo (Brazil)

A single wafer cluster tool was developed. It is composed of a central robot arm wafer handler and three processing chambers: a RF PECVD chamber, a microwave after glow RPECVD chamber and a rapid thermal annealing chamber. The tool is designed to allow high flexibility, with in-situ multi-sequential processing capability. An in depth study of the deposition of silicon oxide by PECVD was performed. As unique features, it handles TEOS vapor without a carrier gas and it includes a double stage gas distribution system. The films were characterized by means of ellipsometry, FTIRS, RBS, AES, SIMS, stress and etch rate in diluted (1:100) HF solution. Good uniformity (> 98%) was obtained. The results show that the quality of the films is most influenced by the wafer temperature and flux of oxygen. For the best condition, the following results were obtained: deposition rate of 370 nm/min., refraction index of 1.46, stoichiometry of 2.0, intrinsic stress of 1.3 {times} 10{sup 9} dyn/cm{sup 2}, carbon content below the AES and SIMS detection limit and low OH content. They also propose a model that fits the results.

• OSTI ID: 400670
• Report Number(s): CONF-960401-; ISBN 1-55899-332-0; TRN: IM9650%%75
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR MATERIALS
FABRICATION
STRESSES
SILICON
SILICON OXIDES
CHEMICAL VAPOR DEPOSITION
SEMICONDUCTOR DEVICES
MANUFACTURING
BORON ADDITIONS
PHOSPHORUS ADDITIONS
DOPED MATERIALS
GAS FLOW
OXYGEN
ORGANOMETALLIC COMPOUNDS
RF SYSTEMS
PRESSURE DEPENDENCE
ANNEALING
FOURIER TRANSFORM SPECTROMETERS
RUTHERFORD SCATTERING
AUGER ELECTRON SPECTROSCOPY
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
THERMAL EXPANSION
EXPERIMENTAL DATA