Application of holographic interferometry to flow pattern visualization in a RTCVD reactor

Book · Sun Dec 01 00:00:00 EST 1996

OSTI ID:400657

Rainova, Yu P; Antonenko, K I ^[1]; Pezoldt, J; Eichhorn, G ^[2]

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1. Moscow State Inst. of Electronic Engineering, Moscow (Russian Federation). Dept. of Physical Chemistry Fundamentals of Microelectronic Technology
2. TU Ilmenau (Germany). Inst. fuer Festkoerperelektronik

This paper presents the development of an experimental technique for the reception of holographic interferograms of H{sub 2} and Ar flows in a RTCVD reactor with a complex geometry. The obtained holographic patterns were analyzed for the reconstruction of the gas flow in the RTCVD reactor. The fringe patterns showing the gas density distributions were recalculated into temperature distributions. Experimental results were compared with the predicted flow field.

• OSTI ID: 400657
• Report Number(s): CONF-960401-; ISBN 1-55899-332-0; TRN: IM9650%%62
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
CHEMICAL VAPOR DEPOSITION
GAS FLOW
INTERFEROMETERS
HYDROGEN
ARGON
DENSITY
TEMPERATURE DISTRIBUTION
MATHEMATICAL MODELS
EXPERIMENTAL DATA
CORRELATIONS