The role of impurities in LP-MOCVD grown gallium nitride
- Rutgers, The State Univ. of New Jersey, Piscataway, NJ (United States)
- EMCORE Corp., Somerset, NJ (United States)
The authors have investigated the relationship of the Hall electron mobility to the background carrier concentration in low pressure MOCVD grown GaN. The highest electron mobility (400 cm{sup 2}/V{center_dot}s) of the unintentionally doped GaN was obtained at a carrier concentration of 1 {times} 10{sup 17} cm{sup {minus}3} and samples with carrier concentrations lower than this exhibited lower mobilities. SIMS analysis shows C and O concentrations in the range of 2--3 {times} 10{sup 16} cm{sup {minus}3} and H in the 2--3 {times} 10{sup 17} cm{sup {minus}3} range. Structural defects, stoichiometry and impurities in the GaN films grown under different conditions are investigated to understand their relationship to the electron Hall mobilities. In particular, different growth temperatures and pressures were used to grow undoped GaN and modify the background doping effect of the impurities.
- OSTI ID:
- 394999
- Report Number(s):
- CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%76
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM NITRIDES
RESIDUAL STRESSES
MICROSTRUCTURE
ELECTRICAL PROPERTIES
SAMPLE PREPARATION
CHEMICAL VAPOR DEPOSITION
STRAINS
STOICHIOMETRY
HALL EFFECT
CARRIER DENSITY
DISLOCATIONS
TRANSMISSION ELECTRON MICROSCOPY
RUTHERFORD SCATTERING
AUGER ELECTRON SPECTROSCOPY
IMPURITIES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
PRESSURE DEPENDENCE
EXPERIMENTAL DATA