Electronic and optical properties of the group-III nitrides, their heterostructures and alloys
- Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Physics
Various aspects of the electronic structure of the group III nitrides are discussed. The relation between band structures and optical response in the vacuum ultraviolet is analyzed for zincblende and wurtzite GaN and for wurtzite AlN and compared with available experimental data obtained from reflectivity and spectroscopic ellipsometry. The spin-orbit and crystal field splittings of the valence band edges and their relations to exciton fine structure are discussed including substrate induced biaxial strain effects. The band-offsets between the III-nitrides and some relevant semiconductor substrates obtained within the dielectric midgap energy model are presented and strain effects which may alter these values are discussed. The importance of lattice mismatch in bandgap bowing is exemplified by comparing Al{sub x}Ga{sub 1{minus}x}N and In{sub x}Ga{sub 1{minus}x}N.
- OSTI ID:
- 394989
- Report Number(s):
- CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%66
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
GALLIUM NITRIDES
ELECTRONIC STRUCTURE
OPTICAL PROPERTIES
ALUMINIUM NITRIDES
INDIUM NITRIDES
ELECTRONIC EQUIPMENT
SEMICONDUCTOR MATERIALS
BAND THEORY
MUFFIN-TIN POTENTIAL
BRILLOUIN ZONES
L-S COUPLING
ULTRAVIOLET SPECTRA
REFLECTIVITY
PHOTOEMISSION
LATTICE PARAMETERS
EXCITONS
STRAINS