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Title: Single crystal wurtzitic aluminum nitride growth on silicon using supersonic gas jets

Abstract

Highly oriented aluminum nitride (0001) films have been grown on Si(001) and Si(111) substrates at temperatures between 550 C and 775 C with dual supersonic molecular beam sources. Triethylaluminum (TEA;[(C{sub 2}H{sub 5}){sub 3}Al]) and ammonia (NH{sub 3}) were used as precursors. Hydrogen, helium, and nitrogen were used as seeding gases for the precursors. Providing a wide range of possible kinetic energies for the supersonic beams due to the disparate masses of the seed gases. Growth rates of AlN were found to depend strongly on the substrate orientation and the kinetic energy of the incident precursor; a significant increase in growth rate is seen when seeding in hydrogen or helium as opposed to nitrogen. Growth rates were 2--3 times greater on Si(001) than on Si(111). Structural characterization of the films was done by reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD). X-ray rocking curve (XRC) full-width half-maxima (FWHM) were seen as small as 2.5{degree}. Rutherford back scattering (RBS) was used to determine the thickness of the films and their chemical composition. Films were shown to be nitrogen rich, deviating from perfect stoichiometry by 10--20%. Surface analysis was performed by Auger electron spectroscopy (AES).

Authors:
; ; ; ;  [1]
  1. Cornell Univ., Ithaca, NY (United States)
Publication Date:
OSTI Identifier:
394970
Report Number(s):
CONF-951155-
ISBN 1-55899-298-7; TRN: IM9648%%47
Resource Type:
Book
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ALUMINIUM NITRIDES; ENERGY BEAM DEPOSITION; CRYSTAL STRUCTURE; ELECTRONIC EQUIPMENT; SEMICONDUCTOR MATERIALS; ORGANOMETALLIC COMPOUNDS; AMMONIA; HYDROGEN; HELIUM; NITROGEN; CHEMICAL REACTIONS; KINETIC ENERGY; NOZZLES; ORIENTATION; ELECTRON DIFFRACTION; X-RAY DIFFRACTION; RUTHERFORD SCATTERING; AUGER ELECTRON SPECTROSCOPY; ELLIPSOMETRY; STOICHIOMETRY; EXPERIMENTAL DATA

Citation Formats

Ustin, S A, Lauhon, L, Brown, K A, Hu, D Q, and Ho, W. Single crystal wurtzitic aluminum nitride growth on silicon using supersonic gas jets. United States: N. p., 1996. Web.
Ustin, S A, Lauhon, L, Brown, K A, Hu, D Q, & Ho, W. Single crystal wurtzitic aluminum nitride growth on silicon using supersonic gas jets. United States.
Ustin, S A, Lauhon, L, Brown, K A, Hu, D Q, and Ho, W. 1996. "Single crystal wurtzitic aluminum nitride growth on silicon using supersonic gas jets". United States.
@article{osti_394970,
title = {Single crystal wurtzitic aluminum nitride growth on silicon using supersonic gas jets},
author = {Ustin, S A and Lauhon, L and Brown, K A and Hu, D Q and Ho, W},
abstractNote = {Highly oriented aluminum nitride (0001) films have been grown on Si(001) and Si(111) substrates at temperatures between 550 C and 775 C with dual supersonic molecular beam sources. Triethylaluminum (TEA;[(C{sub 2}H{sub 5}){sub 3}Al]) and ammonia (NH{sub 3}) were used as precursors. Hydrogen, helium, and nitrogen were used as seeding gases for the precursors. Providing a wide range of possible kinetic energies for the supersonic beams due to the disparate masses of the seed gases. Growth rates of AlN were found to depend strongly on the substrate orientation and the kinetic energy of the incident precursor; a significant increase in growth rate is seen when seeding in hydrogen or helium as opposed to nitrogen. Growth rates were 2--3 times greater on Si(001) than on Si(111). Structural characterization of the films was done by reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD). X-ray rocking curve (XRC) full-width half-maxima (FWHM) were seen as small as 2.5{degree}. Rutherford back scattering (RBS) was used to determine the thickness of the films and their chemical composition. Films were shown to be nitrogen rich, deviating from perfect stoichiometry by 10--20%. Surface analysis was performed by Auger electron spectroscopy (AES).},
doi = {},
url = {https://www.osti.gov/biblio/394970}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Nov 01 00:00:00 EST 1996},
month = {Fri Nov 01 00:00:00 EST 1996}
}

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