Parasitic reactions between alkyls and ammonia in OMVPE

Book · Fri Nov 01 00:00:00 EST 1996

OSTI ID:394938

Chen, C H; Liu, H; Steigerwald, D; Imler, W; Kuo, C P; Craford, M G ^[1]

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1. Hewlett-Packard Optoelectronics Div., San Jose, CA (United States)

The parasitic reactions between ammonia and commonly used alkyls have been studied in a horizontal OMVPE reactor. The results indicate that parasitic reactions between TMAl and NH{sub 3} is severe, leading to the necessity to grow AlN at low reactor pressure. On the other hand, parasitic reactions between TMGa + NH{sub 3} and TMIn + NH{sub 3} are not significant and it is possible to grow GaN and GaInN at any reactor pressure.

• OSTI ID: 394938
• Report Number(s): CONF-951155-; ISBN 1-55899-298-7; TRN: 96:029022
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
ALUMINIUM NITRIDES
INDIUM NITRIDES
VAPOR PHASE EPITAXY
ORGANOMETALLIC COMPOUNDS
CHEMICAL REACTIONS
PRESSURE DEPENDENCE
TEMPERATURE DEPENDENCE
EFFICIENCY
SCANNING ELECTRON MICROSCOPY
X-RAY DIFFRACTION
EXPERIMENTAL DATA