Contact heat conductance at a diamond-OFHC copper interface with GaIn eutectic as a heat transfer medium
- Experimental Facilities Division, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
The results of an experimental study of the contact heat conductance across a single diamond crystal interface with OFHC copper (Cu) are reported. Gallium-indium (GaIn) eutectic was used as an interstitial material. Contact conductance data are important in the design and the prediction of the performance of x-ray optics under high-heat-load conditions. Two sets of experiments were carried out. In one, the copper surface in contact with diamond was polished and then electroless plated with 1 {mu}m of nickel, while in the other, the copper contact surface was left as machined. The measured average interface heat conductances are 44.7{plus_minus}8 W/cm{sup 2}-K for nonplated copper and 23.0{plus_minus}8 W/cm{sup 2}-K for nickel-plated copper. For reference, the thermal contact conductances at a copper-copper interface (without diamond) were also measured, and the results are reported. A typical diamond monochromator, 0.2 mm thick, will absorb about 44 W under a standard undulator beam at the Advanced Photon Source. The measured conductance for nickel-plated copper suggests that the temperature drop across the interface of diamond and nickel-plated copper, with a 20 mm {sup 2}contact area, will be about 10{degree}C. Therefore temperature rises are rather modest, and the accuracy of the measured contact conductances presented here are sufficient for design purposes. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 390340
- Report Number(s):
- CONF-9510119-; ISSN 0034-6748; TRN: 96:027947
- Journal Information:
- Review of Scientific Instruments, Vol. 67, Issue 9; Conference: SRI `95: synchrotron radiation instrumentation symposium and the 7. users meeting for the advanced photon source (APS), Argonne, IL (United States), 16-20 Oct 1995; Other Information: PBD: Sep 1996
- Country of Publication:
- United States
- Language:
- English
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