High temperature spice modeling of partially depleted SOI MOSFETs
- School of Electrical Engineering & Computer Science, Washington State University, Pullman, Washington 99164-2752 (United States)
- Electrical and Computer Engineering Department, Tennessee State University, Nashville, Tennessee 37209 (United States)
Several partially depleted SOI N- and P-mosfets with dimensions ranging from W/L=30/10 to 15/3 were characterized from room temperature up to 300 C. The devices exhibited a well defined and sharp zero temperature coefficient biasing point up to 573 K in both linear and saturation regions. Simulation of the I-V characteristics using a temperature dependent SOI SPICE were in excellent agreement with measurements. Additionally, measured ZTC points agreed favorably with the predicted ZTC points using expressions derived from the temperature dependent SOI model for the ZTC {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 385503
- Report Number(s):
- CONF-960109-; ISSN 0094-243X; TRN: 9618M0105
- Journal Information:
- AIP Conference Proceedings, Vol. 361, Issue 1; Conference: STAIF 96: space technology and applications international forum, Albuquerque, NM (United States), 7-11 Jan 1996; Other Information: PBD: Mar 1996
- Country of Publication:
- United States
- Language:
- English
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