Simulation of electron transport across charged grain boundaries
- Department of Materials, College of Engineering, University of California, Santa Barbara, California 93106-5050 (United States)
- Banbury Laboratory, Alcan International Limited, Banbury OX16 7SP (England)
The {ital I}{endash}{ital V} (current density-electric field) characteristics of low-angle grain boundaries consisting of periodic arrays of charged dislocations are computed using a quasiclassical molecular dynamics approach. Below a critical value of the grain boundary misorientation, the computed {ital I}{endash}{ital V} characteristics are linear whereas above they are nonlinear. The degree of nonlinearity and the voltage onset of nonlinearity are found to be dependent on the grain boundary misorientation. {copyright} {ital 1996 American Institute of Physics.}
- DOE Contract Number:
- FG03-91ER45447
- OSTI ID:
- 383720
- Journal Information:
- Applied Physics Letters, Vol. 69, Issue 12; Other Information: PBD: Sep 1996
- Country of Publication:
- United States
- Language:
- English
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