Observation of semiconductor superstructures with backscattered electrons in a scanning electron microscope

Conference · Sun Dec 31 00:00:00 EST 1995

OSTI ID:375968

Bosacchi, A; Franchi, S ^[1]; Govoni, D; Mattei, G; Merli, P G; Migliori, A ^[2]; Nacucchi, M ^[3]

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1. Ist. MASPEC del CNR, Parma (Italy)
2. Ist. LAMEL del CNR, Bologna (Italy)
3. CNRSM SCpA, Brindisi (Italy)

Observations of semiconductor superstructures with backscattered electrons in a scanning electron microscope have been used to revisit the concept of resolution of the backscattering imaging mode. It will be shown that the generation volume doesn`t represent in itself a limit to the resolution, which depends only on the beam size and the signal to noise ratio.

• OSTI ID: 375968
• Report Number(s): CONF-941144-; ISBN 1-55899-255-3; TRN: IM9642%%56
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Beam-solid interactions for materials synthesis and characterization; Jacobson, D.C. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Luzzi, D.E. [ed.] [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Heinz, T.F. [ed.] [Columbia Univ., New York, NY (United States)]; Iwaki, Masaya [ed.] [Inst. of Physical and Chemical Research, Wako, Saitama (Japan)]; PB: 763 p.; Materials Research Society symposium proceedings, Volume 354
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SCANNING ELECTRON MICROSCOPY
SPATIAL RESOLUTION
SEMICONDUCTOR MATERIALS
SUPERLATTICES
SIGNAL-TO-NOISE RATIO