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Title: Hopping in high {Tc} cuprates

Journal Article · · International Journal of Modern Physics B
 [1]
  1. Ecole Polytechnique Federale de Lausanne (Switzerland). Lab. de Physique des Solides Semi-cristallins

High temperature superconductors based on copper oxide are fascinating materials not only because of their high transition temperatures which reach values as high as 130K, but also because of the possibility of studying other phenomena such as low dimensional magnetism, two dimensional localization, weak localization and hopping. Many oxide families are now known with different maximum {Tc} values. All these systems have CuO{sub 2} planes as conducting units. At low carrier density the system is electrically insulating with a long range antiferromagnetic order below a Neel temperature of the order of 300 K, which falls strongly with increased carrier concentration. Above a critical carrier density superconductivity appears, {Tc} reaches maximum at an optimal carrier density and decreases on further doping. For the superconducting compositions the system is generally metallic above {Tc} but there is a common opinion that it is an unusual metal with strong electron-electron correlations. Studies of hopping can be made in the low carrier density range, where the samples are non-metallic and one hopes to gain insight into the density of states, electron correlations, dimensionality of the charge transport etc. by resistivity measurements. It is less commonly known that there is also hopping-like transport even for higher carrier concentrations. Namely this is the case for the transverse charge transport between the CuO{sub 2} planes in the metallic phase.

Sponsoring Organization:
USDOE
OSTI ID:
37202
Report Number(s):
CONF-930879-; ISSN 0217-9792; TRN: 95:009372
Journal Information:
International Journal of Modern Physics B, Vol. 8, Issue 7; Conference: 5. international conference on hopping and related phenomena, Glasgow (United Kingdom), 31 Aug - 3 Sep 1993; Other Information: PBD: 30 Mar 1994
Country of Publication:
United States
Language:
English