High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108 (United States)
- Lockheed Martin, Inc., Schenectady, New York 12301-1072 (United States)
We report high-performance lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with a 0.5 eV band gap. The TPV structures were grown on GaSb substrates by organometallic vapor phase epitaxy at a lower temperature (525 {degree}C compared to 550 {degree}C) to improve the quality of the metastable GaInAsSb alloy. The 0.5 eV TPV devices exhibit external quantum efficiency as high as 60{percent}, which corresponds to an internal quantum efficiency of 90{percent}, assuming 35{percent} reflection losses. This efficiency is comparable to the value measured for 0.53 eV devices. The ratio of the open circuit voltage to band-gap energy ratio decreases from 0.57 for 0.53 eV devices to 0.48 for 0.5 eV devices. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 365975
- Journal Information:
- Applied Physics Letters, Vol. 75, Issue 9; Other Information: PBD: Aug 1999
- Country of Publication:
- United States
- Language:
- English
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