Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition
- Department of Electrical Engineering, University of Colorado--Boulder, Boulder, Colorado (United States)
- National Renewable Energy Laboratory, NREL, Golden, Colorado (United States)
We demonstrate epitaxial silicon growth of 8 {Angstrom}/s at temperatures as low as 195&hthinsp;{degree}C, using hot-wire chemical vapor deposition. Characterization by transmission electron microscopy shows epitaxial layers of Si. We briefly discuss various aspects of the process parameter space. Finally, we consider differences in the chemical kinetics of this process when compared to other epitaxial deposition techniques. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 361594
- Journal Information:
- Applied Physics Letters, Vol. 75, Issue 7; Other Information: PBD: Aug 1999
- Country of Publication:
- United States
- Language:
- English
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