Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
We report first-principles calculations in terms of which we propose a unified description of the atomic dynamics that underlie the nucleation and growth of SiO{sub 2} precipitates in Si and the oxidation of Si thin films. We identify a mechanism for the observed emission of Si interstitials and show that it eliminates electrically active defects without introducing dangling bonds. The results provide an explanation for the low defect density at the Si{endash}SiO{sub 2} interface and suggest a novel family of electrically active interface defects that are akin to the {open_quotes}thermal donors{close_quotes} in Si. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 349333
- Journal Information:
- Applied Physics Letters, Vol. 75, Issue 1; Other Information: PBD: Jul 1999
- Country of Publication:
- United States
- Language:
- English
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