Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition
Abstract
The morphology and biaxial stress of amorphous boron films grown on silicon at 630 {degree}C have been determined {ital in situ} and in real time using energy dispersive x-ray reflectivity and multiple-beam optical stress sensor techniques. The capability to determine the morphology and stress of light-element thin films {ital in situ} and in real time provides a unique opportunity to optimize the parameters of thin film deposition under chemical vapor deposition conditions. {copyright} {ital 1999 American Vacuum Society.}
- Authors:
-
- Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)
- Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504 (United States)
- Publication Date:
- OSTI Identifier:
- 348153
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Vacuum Science and Technology, A
- Additional Journal Information:
- Journal Volume: 17; Journal Issue: 3; Other Information: PBD: May 1999
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; BORON; THIN FILMS; AMORPHOUS STATE; STRESSES; CHEMICAL VAPOR DEPOSITION; STRUCTURAL CHEMICAL ANALYSIS; X-RAY DIFFRACTION; REFLECTIVITY; THICKNESS; ROUGHNESS; SILICON; INTERFACES
Citation Formats
Nesting, D C, Kouvetakis, J, Hearne, S, Chason, E, and Tsong, I S. Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition. United States: N. p., 1999.
Web. doi:10.1116/1.581661.
Nesting, D C, Kouvetakis, J, Hearne, S, Chason, E, & Tsong, I S. Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition. United States. https://doi.org/10.1116/1.581661
Nesting, D C, Kouvetakis, J, Hearne, S, Chason, E, and Tsong, I S. 1999.
"Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition". United States. https://doi.org/10.1116/1.581661.
@article{osti_348153,
title = {Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition},
author = {Nesting, D C and Kouvetakis, J and Hearne, S and Chason, E and Tsong, I S},
abstractNote = {The morphology and biaxial stress of amorphous boron films grown on silicon at 630 {degree}C have been determined {ital in situ} and in real time using energy dispersive x-ray reflectivity and multiple-beam optical stress sensor techniques. The capability to determine the morphology and stress of light-element thin films {ital in situ} and in real time provides a unique opportunity to optimize the parameters of thin film deposition under chemical vapor deposition conditions. {copyright} {ital 1999 American Vacuum Society.}},
doi = {10.1116/1.581661},
url = {https://www.osti.gov/biblio/348153},
journal = {Journal of Vacuum Science and Technology, A},
number = 3,
volume = 17,
place = {United States},
year = {Sat May 01 00:00:00 EDT 1999},
month = {Sat May 01 00:00:00 EDT 1999}
}
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