Stability of trapped electrons in SiO{sub 2}

Journal Article · Sat May 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123982· OSTI ID:338662

Fleetwood, D M; Winokur, P S ^[1]; Flament, O; Leray, J L ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1083 (United States)
2. CEA/DAM Ile-de-France, BP 12, F-91680 Bruyeres-Le-Chatel (France)

Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal{endash}oxide{endash}semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of {approximately}3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and exhibit response that is qualitatively consistent with existing models of compensated E{sub {gamma}}{sup {prime}} centers in SiO{sub 2}. Deeper traps may be part of a different dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 338662
• Journal Information: Applied Physics Letters, Vol. 74, Issue 20; Other Information: PBD: May 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
SILICON COMPOUNDS
SILICON OXIDES
CAPACITORS
MOS TRANSISTORS
TRAPPED ELECTRONS
RADIATION HARDENING
ANNEALING
X RADIATION
KEV RANGE 01-10
INTERFACES