Boron doping to diamond and DLC using plasma immersion ion implantation
- Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical Engineering
Controlling carriers in diamond by doping is important to realize diamond electronic devices with advanced electrical characteristics. As a doping method the Plasma Immersion Ion Implantation (PIII) has been gathering attention due to its excellence in making shallow, highly doped regions over large areas, and its high dose rate, good dose controllability and isotropic doping properties. The authors have begun to investigate boron doping of diamond, silicon and diamond-like carbon films using PIII. As a doping source they use the plasma sputtering of a solid boron carbide (B{sub 4}C) target instead of toxic gas source like diborane (B{sub 2}H{sub 6}). The B{sub 4}C target of 1-in. diameter and a substrate (Si, diamond or diamond-like carbon film) are located in the downtown region of an ECR plasma produced by the microwave plasma disc reactor (MPDR) filled with 1--5 mTorr Ar gas. In order to sputter the target a negative self bias from {minus}400V to {minus}700V is induced by applying RF (13.56 MHz) power of 50--200W to the target holder. For boron ion implantation, negative pulses of {minus}1kV to {minus}8kV, 1--5{micro}s pulse duration, 1--200Hz repetition rate are applied to the substrate holder using a voltage pulser which consists of high voltage capacitors and MOSFETs. After thermal treatment of the doped materials their electrical resistivity are measured using the four-probe method. Details of both the PIII source and substrate doping experimental results are shown at the meeting.
- OSTI ID:
- 338502
- Report Number(s):
- CONF-970559-; TRN: IM9919%%118
- Resource Relation:
- Conference: 24. IEEE international conference on plasma science, San Diego, CA (United States), 19-23 May 1997; Other Information: PBD: 1997; Related Information: Is Part Of IEEE conference record -- Abstracts; PB: 354 p.
- Country of Publication:
- United States
- Language:
- English
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