Two color blinking of single strain-induced GaAs quantum dots

Journal Article · Sat May 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123932· OSTI ID:337498

Bertram, D; Hanna, M C; Nozik, A J ^[1]

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1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

In this letter we report on a temporal instability in the ground and excited state luminescence of a single strain-induced quantum dot. Using a microscopic photoluminescence technique, we record spectra from a single strain-induced quantum dot in the GaAs/(AlGa)As material system. On a time scale of seconds the luminescence shows an increase and decrease in intensity with an increase of the ground state luminescence correlating with a decrease in the excited state luminescence intensity and vice versa. We term the observed effect two color blinking. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 337498
• Journal Information: Applied Physics Letters, Vol. 74, Issue 18; Other Information: PBD: May 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GROUND STATES
EXCITED STATES
GALLIUM ARSENIDES
STRAINS
PHOTOLUMINESCENCE
ALUMINIUM ARSENIDES
SEMICONDUCTOR DEVICES
HETEROJUNCTIONS
THIN FILMS
COLOR