Structural characterization of amorphized InP: Evidence for chemical disorder
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra (Australia)
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Australian Nuclear Science and Technology Organisation, Menai (Australia)
- School of Materials Science and Engineering, Seoul National University, Seoul (Korea)
Extended x-ray absorption fine-structure measurements at the In {ital K} edge of amorphous InP are presented. The presence of chemical disorder in the form of like-atom bonding has been unambiguously demonstrated in stoichiometric InP amorphized by ion implantation. In{endash}In bonding comprised 14{percent}{plus_minus}4{percent} of the In{endash}atom constituent bonds. Also, relative to the crystalline value of four P atoms, an increase in the total In coordination number to 4.16{plus_minus}0.32 atoms was observed for the amorphous phase, as composed of 3.56{plus_minus}0.19; P and 0.60{plus_minus}0.13; In atoms. Experimental results were consistent with recent {ital ab initio} structural calculations and, furthermore, demonstrated that amorphous InP is best described by a Polk-like continuous random network, containing both even- and odd-membered rings. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 328582
- Journal Information:
- Applied Physics Letters, Vol. 74, Issue 12; Other Information: PBD: Mar 1999
- Country of Publication:
- United States
- Language:
- English
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