Emerging optocoupler issues with energetic particle-induced transients and permanent radiation degradation
- NASA/GSFC, Greenbelt, MD (United States)
- NRL/SFA, Largo, MD (United States)
- JPL, Pasadena, CA (United States)
- NRL, Washington, DC (United States)
- Ball Aerospace, Boulder, CO (United States)
- Jackson and Tull Chartered Engineers, Washington, DC (United States)
Radiation-induced permanent degradation and single event transient effects for optocouplers are discussed in this paper. These two effects are independent to the first order and will be addressed separately. Displacement damage-induced degradation of optocoupler current transfer ratio is reviewed. New data are presented that show the importance of application specific testing and that generalized quantification of optocoupler CTR degradation can lead to incorrect predictions of actual circuit performance in a radiation environment. Data are given for various circuit loading and drive current parameters. Previous work that introduces the idea that two mechanisms exist for inducing transients on the optocoupler output is discussed. New data are presented that extends the evidence of this dual mechanism hypothesis. In this work measurements show that single event transient cross sections and transient propagation varies with circuit filtering. Finally, the authors discuss utilization of the optocouplers in the space environment. New data are applied to two examples: one on permanent degradation and the other on single event transient rates in high bandwidth applications.
- OSTI ID:
- 323963
- Report Number(s):
- CONF-980705-; ISSN 0018-9499; TRN: 99:004483
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 45, Issue 6Pt1; Conference: IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998; Other Information: PBD: Dec 1998
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single-even upset effects in optocouplers
A comprehensive understanding of the efficacy of N-Ring hardening methodologies in SiGe HBTs.