Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides
- Univ. di Padova (Italy). Dept. di Elettronica e Informatica
- Univ. di Padova (Italy). Dipt. di Elettronica e Informatica
- ST Microelectronics, Agrate Brianza (Italy)
Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices.
- OSTI ID:
- 323911
- Report Number(s):
- CONF-980705-; ISSN 0018-9499; TRN: 99:004431
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 45, Issue 6Pt1; Conference: IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998; Other Information: PBD: Dec 1998
- Country of Publication:
- United States
- Language:
- English
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