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Title: Material requirements for a boron phosphide thermal neutron counter

Conference ·
OSTI ID:323900
;  [1];  [2]
  1. Sandia National Labs., Livermore, CA (United States)
  2. Univ. of California, Los Angeles, CA (United States). Dept. of Materials Science and Engineering; and others

Electrical characterization (current versus voltage and capacitance versus voltage) of nonstoichiometric amorphous boron phosphide Schottky diodes for neutron detection is presented. These results are incorporated in a Monte Carlo model of detector response to determine material requirements for a boron phosphide neutron counter.

Sponsoring Organization:
USDOE, Washington, DC (United States)
OSTI ID:
323900
Report Number(s):
CONF-971201-; TRN: 99:004426
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
Country of Publication:
United States
Language:
English