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Title: Dielectric spectroscopy study of ZnSe grown by physical vapor transport

Book ·
OSTI ID:323890
;  [1];  [2]
  1. Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Engineering
  2. National Aeronautics and Space Administration, Huntsville, AL (United States). Marshall Space Flight Center

ZnSe, although generally thought of as a wide band gap semiconductor, is insulating in the as-grown state. It is only after heat treatment in a zinc rich atmosphere that semiconducting properties are observed. Therefore, dielectric spectroscopy is an appropriate tool to study the electrical properties of as grown ZnSe. The dielectric properties of large-grained samples of ZnSe grown by physical vapor transport were measured as a function of frequency. Differences can be seen in the dielectric properties of samples grown under different conditions (such as the effect of a seed and the orientation of the gravity field during growth). The spectra of heat treated samples were also acquired and were found to exhibit significant deviations from those of the as grown crystals.

Sponsoring Organization:
National Aeronautics and Space Administration, Washington, DC (United States)
OSTI ID:
323890
Report Number(s):
CONF-971201-; TRN: IM9912%%208
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
Country of Publication:
United States
Language:
English