Hydrogenation of undoped and nitrogen doped CdTe and ZnSe grown by molecular beam epitaxy

Book · Thu Dec 31 00:00:00 EST 1998

OSTI ID:308117

Hirsch, L S; Setzler, S D; Ptak, A J; Giles, N C; Myers, T H ^[1]

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1. West Virginia Univ., Morgantown, WV (United States). Physics Dept.

Hydrogen incorporation in both undoped and nitrogen-doped CdTe and ZnSe is investigated. Evidence for a strong nitrogen-hydrogen interaction is presented. Preliminary data indicate that the growth of CdTe and ZnSe under an atomic hydrogen flux results in a significant concentration of paramagnetic defects possibly accompanied by enhanced auto-doping from residual impurities.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States)
• OSTI ID: 308117
• Report Number(s): CONF-980405-; TRN: IM9907%%43
• Resource Relation: Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998; Other Information: PBD: 1998; Related Information: Is Part Of Hydrogen in semiconductors and metals; Nickel, N.H. [ed.] [Hahn-Meitner-Inst., Berlin (Germany)]; Jackson, W.B. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Bowman, R.C. [ed.] [Jet Propulsion Lab., Pasadena, CA (United States)]; Leisure, R.G. [ed.] [Colorado State Univ., Fort Collins, CO (United States)]; PB: 469 p.; Materials Research Society symposium proceedings, Volume 513
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HYDROGENATION
DOPED MATERIALS
CADMIUM TELLURIDES
ZINC SELENIDES
IMPURITIES
CRYSTAL DEFECTS
MOLECULAR BEAM EPITAXY
EXPERIMENTAL DATA