skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Hydrogen in semiconductors and metals

Conference ·
OSTI ID:308085
 [1];  [2];  [3];  [4]
  1. ed.; Hahn-Meitner-Inst., Berlin (Germany)
  2. ed.; Xerox Palo Alto Research Center, CA (United States)
  3. ed.; Jet Propulsion Lab., Pasadena, CA (United States)
  4. ed.; Colorado State Univ., Fort Collins, CO (United States)

Major highlights of the conference include further understanding of the structure of extended hydrogen clusters in semiconductors, switchable optical properties of metal-hydride films, reversible changes in the magnetic coupling in metallic superlattices, and increased lifetime of integrated circuits due to deuterium device passivation. Continued progress has also been achieved in understanding hydrogenation of defects in compound semiconductors and on surfaces. Total energy calculations in semiconductors have progressed sufficiently to predict energetics and vibration frequencies as measured by experiment. Similarly, electronic structure calculations of hydrogen-metal systems provide a deeper understanding of stability, bonding, and phase changes. Various nuclear techniques have been refined to yield important information regarding the concentration and transport of hydrogen in condensed matter. Finally, the interaction of hydrogen to create thermal donors has been used to create deep p-n junctions without the need for deep diffusion of dopants. The volume has been organized along the order of presentation within the conference. Similar methods and subjects have been grouped together. The authors have attempted to keep similar metal and semiconductor papers together in order to further promote cross-fertilization between the fields. Major categories include hydrogen on surfaces, theory and thermodynamics, hydrogen transport phenomena, nuclear characterization techniques, compound semiconductors, metal bulk, devices and applications, bulk silicon, and carbon and carbon-like materials. Separate abstracts were prepared for most papers.

OSTI ID:
308085
Report Number(s):
CONF-980405-; TRN: IM9907%%11
Resource Relation:
Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998; Other Information: PBD: 1998; Related Information: Materials Research Society symposium proceedings, Volume 513
Country of Publication:
United States
Language:
English