n-ZnSe/p-GaAs heterojunction solar cells
- Hahn-Meitner-Inst., Berlin (Germany)
- AIXTRON AG, Aachen (Germany)
- Technische Univ., Berlin (Germany). Inst. fuer Festkoerperphysik
For PV applications epitaxial layers of n-ZnSe were grown by metal-organic vapor phase epitaxy (MOVPE) at 340 C on GaAs(001) substrates. n-type net carrier concentration in the range between 10{sup 17}--10{sup 19} cm{sup {minus}3} was demonstrated. By increasing the doping concentration the double crystal x-ray diffraction full width at half maximum of 1.2 {micro}m thick ZnSe-layers increased. A first n-ZnSe/p-GaAs solar cell achieved an open circuit voltage of 706 mV, a fill factor of 65% and a short circuit current density of 10mACm{sup {minus}2} (total area, ELH-lamp, 100mW/cm{sup 2}, no AR-coating). J{sub sc} was increased by 4mA/cm{sup 2} by depositing sputtered n{sup +}-ZnO on the n-ZnSe layer. In order to further improve the PV performance n-ZnSe will be grown on GaAs buffer layers, the doping profile will be optimized systematically and MgF{sub 2} will be deposited on the ZnO layer.
- OSTI ID:
- 304411
- Report Number(s):
- CONF-970953-; TRN: IM9905%%103
- Resource Relation:
- Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
- Country of Publication:
- United States
- Language:
- English
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