GaInP/GaAs cascade solar cells grown by molecular beam epitaxy
- Tampere Univ. of Technology (Finland). Dept. of Physics
First results for molecular beam epitaxy (MBE) grown Ga{sub 0.51}In{sub 0.49}P/GaAs cascade solar cells are presented. The structures were prepared by both solid-source (SS) MBE and gas-source (GS) MBE. The tunnel diodes between the subcells were grown by using the standard MBE dopants (silicon and beryllium) but dopant diffusion related degradation of the cell characteristics was not observed. For the best SSMBE structure, a conversion efficiency of 21.1% was measured at AMO for a 1x1 cm{sup 2} cell. For the GSMBE structures, the best AMO conversion efficiency was 20.8% for a 2x2 cm{sup 2} device. In addition, the first MBE results for advanced Al{sub 0.51}In{sub 0.49}P/Ga{sub 0.51}In{sub 0.49}P-based tunnel diodes are presented.
- OSTI ID:
- 304383
- Report Number(s):
- CONF-970953-; TRN: IM9905%%75
- Resource Relation:
- Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
- Country of Publication:
- United States
- Language:
- English
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