Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells
Conference
·
OSTI ID:304334
- Forschungszentrum Juelich (Germany)
This paper treats the use of texture etched ZnO:Al films in amorphous silicon solar cells. Chemically textured ZnO:Al films were implemented as a front TCO in p-i-n (superstrate) and n-i-p (substrate) solar cells, and in combination with Ag as a textured back reflector in n-i-p (substrate) solar cells. These cells exhibit excellent optical and light-trapping properties demonstrated by high short-circuit current densities. Adapted microcrystalline p-layers solve the ZnO/p-contact problem and thereby provide high fill factors and open-circuit voltages. The initial efficiencies so far obtained are close to 10% for p-i-n and 8% for n-i-p solar cells.
- OSTI ID:
- 304334
- Report Number(s):
- CONF-970953-; TRN: IM9905%%26
- Resource Relation:
- Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
- Country of Publication:
- United States
- Language:
- English
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