Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector
- JILA, National Institute of Standards and Technology and University of Colorado, and Department of Physics, University of Colorado, Boulder, Colorado, 80309-0440 (United States)
- National Renewable Energy Laboratory, Golden, Colorado, 80401 (United States)
In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range of carrier densities. Using a simple model, the measurement is used to determine interface, radiative, and Auger recombination rates in the active material. At the optimal density, the quantum efficiency exceeds 60{percent} at room temperature. The divergence of the emitted light is less than 20{degree}. In fact, the beam profile is dominated by a 6{degree} wide lobe that can be swept across the field of emission by changing the excitation position. This suggests a way to create an all-electronic scanned light beam. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 298603
- Journal Information:
- Journal of Applied Physics, Vol. 84, Issue 9; Other Information: PBD: Nov 1998
- Country of Publication:
- United States
- Language:
- English
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