Tomographic reconstruction of an integrated circuit interconnect
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Digital Equipment Corporation, Hudson, Massachusetts 01749 (United States)
An Al{endash}W-silica integrated circuit interconnect sample was thinned to several {mu}m and scanned across a 200 nm focal spot of a Fresnel zone plate operating at photon energy of 1573 eV. The experiment was performed on beamline 2-ID-B of the Advanced Photon Source, a third-generation synchrotron facility. Thirteen scanned projections of the sample were acquired over the angular range {plus_minus}69.2{degree}. At least 301{times}301 pixels were acquired at each angle with a step size of 77{times}57 nm. A three-dimensional image with an approximate uncertainty of 400 nm was reconstructed from projection data using a standard algorithm. The two layers of the integrated circuit and the presence of the focused ion beam markers on the surface of the sample are clearly shown in the reconstruction. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 289255
- Journal Information:
- Applied Physics Letters, Vol. 74, Issue 1; Other Information: PBD: Jan 1999
- Country of Publication:
- United States
- Language:
- English
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