Epitaxial thin-film ruby as an ion-irradiation damage sensor

Journal Article · Sun Sep 01 00:00:00 EDT 1996 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.363232· OSTI ID:286912

Wen, Q ^[1]; Yu, N ^[2]; Clarke, D R ^[1]

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1. Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050 (United States)
2. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

The fluorescence from a thin ruby film, formed by epitaxial growth on a sapphire substrate, is shown to be a sensitive monitor of both the irradiation dose and the strain produced by irradiation of argon ions having an end of range exceeding the thickness of the ruby film. Decreases in fluorescence intensity are detectable for doses in excess of 10{sup 12} cm{sup 2}, whereas no damage is detectable by Rutherford backscattering spectrometry/channeling until doses almost two orders of magnitude larger. Using the systematic shift in fluorescence frequency observed with irradiation, it is concluded that lattice strain accumulates rapidly for doses in excess of 10{sup 14} cm{sup 2}. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 286912
• Journal Information: Journal of Applied Physics, Vol. 80, Issue 6; Other Information: PBD: Sep 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
RUBY
PHYSICAL RADIATION EFFECTS
THIN FILMS
EPITAXY
ARGON IONS
FLUORESCENCE
RUTHERFORD SCATTERING
SPECTRAL SHIFT
STRAINS
EPITAXIAL LAYERS
SENSORS