Reactive-ion etching of WSi{sub {ital x}} in CF{sub 4}+O{sub 2} and the associated damage in GaAs

Journal Article · Mon Jul 01 00:00:00 EDT 1996 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.588767· OSTI ID:286576

Chan, Y; Su, C ^[1]; Sung, K ^[2]

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1. Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of (China)
2. Mosel Vitelic, Inc., Science-based Industrial Park, Hsinchu, Taiwan, Republic of (China)

Assessments of WSi{sub {ital x}} reactive-ion etching in terms of the different CF{sub 4} to O{sub 2} flow rate ratio were characterized. Based upon the evaluations from etching rates, side-wall profiles, surface roughness, and damages, we observed that the optimum etching condition was at a ratio of 10:1. The recovery of reactive-ion-etching-treated GaAs damaged layers through the thermal treatment was also investigated as a function of the annealing temperatures and duration times. These parameter evaluations were for the purpose of achieving a high performance GaAs metal{endash}semiconductor field-effect transistor. {copyright} {ital 1996 American Vacuum Society}

• OSTI ID: 286576
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 4; Other Information: PBD: Jul 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
TUNGSTEN SILICIDES
ETCHING
GALLIUM ARSENIDES
HIGH-FREQUENCY DISCHARGES
CHEMICAL REACTIONS
CARBON TETRAFLUORIDE
OXYGEN
ANNEALING
MORPHOLOGY
TEMPERATURE DEPENDENCE
FIELD EFFECT TRANSISTORS