Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices

Journal Article · Mon Jul 01 00:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118042· OSTI ID:285842

Bastian, G; von Plessen, G; Feldmann, J; Hader, J; Marschner, T; Stolz, W; Goebel, E O ^[1]

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1. Fachbereich Physik and Wiss. Zentrum fuer Materialwissenschaften, Philipps-Universitaet Marburg, D-35032 Marburg (Germany)

We have studied the electroabsorptive properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices consisting of 100 periods. Photocurrent measurements at 4 K reveal a pronounced pseudo-blue shift and a Wannier{endash}Stark splitting of the heavy-hole exciton transition. A self-electro-optic effect device has been realized which makes use of the pseudo-blue shift due to the Wannier{endash}Stark localization and of the transparency of the GaAs substrate. The self-electro-optic effect devices show on{endash}off contrast ratios of 2.1 at 77 K and of 1.3 at room temperature. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 285842
• Journal Information: Applied Physics Letters, Vol. 69, Issue 3; Other Information: PBD: Jul 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SUPERLATTICES
OPTICAL PROPERTIES
STRAINS
GALLIUM ARSENIDES
INDIUM ARSENIDES
GALLIUM PHOSPHIDES
ELECTRO-OPTICAL EFFECTS
PHOTOCURRENTS
EXCITONS
SPECTRAL SHIFT
NONLINEAR OPTICS
ENERGY-LEVEL SPLITTING
OPTICAL BISTABILITY