Ion-implanted GaN junction field effect transistor
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
- Hughes Research Laboratories, Malibu, California 90265 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- EMCORE Corporation, Somerset, New Jersey 08873 (United States)
Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). {ital p}-type and {ital n}-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150{degree}C rapid thermal anneal. A refractory W gate contact was employed that allows the {ital p}-gate region to be self-aligned to the gate contact. A gate turn-on voltage of 1.84 V at 1 mA/mm of gate current was achieved. For a {approximately}1.7 {mu}m{times}50 {mu}m JFET with a {minus}6 V threshold voltage, a maximum transconductance of 7 mS/mm at {ital V}{sub GS}={minus} 2V and saturation current of 33 mA/mm at {ital V}{sub GS}=0 V were measured. These results were limited by excess access resistance and can be expected to be improved with optimized {ital n}{sup +} implants in the source and drain regions. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 282866
- Journal Information:
- Applied Physics Letters, Vol. 68, Issue 16; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Epitaxially-grown GaN junction field effect transistors
An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p[sup +]-GaAs ohmic gate contact