Experimental study to validate a model of hillock{close_quote}s formation in aluminum thin films
- Chemistry and Materials Science, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
The growth of holes and hillocks in thin films has been reported extensively and for a multitude of film{endash}substrate systems. A recently developed model [F. Y. G{acute e}nin, J. Appl. Phys. {bold 77}, 5130 (1995)] which analyzes the formation of a ridge at a traveling grain boundary due to stress and capillarity driving forces provides a quantitative description of the growth of the hillocks. In order to test the model, the surface morphology of aluminum thin films deposited on oxidized silicon substrates and annealed at 450{degree}C in argon is investigated; the profiles of thermal hillocks are measured by atomic force microscopy. The comparison shows excellent agreement between modeled and experimental profiles. {copyright}{ital 1996 American Institute of Physics.}
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 279725
- Journal Information:
- Journal of Applied Physics, Vol. 79, Issue 7; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
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