Verification of models for the simulation of boron implantation into crystalline silicon
- Vienna University of Technology, Gusshausstrasse 27-29/362, A-1040 Vienna (Austria)
- Johannes Kepler University Linz, Altenbergstrasse 69, A-4040 Linz (Austria)
- Siemens AG, Corporate Research and Technology, Otto Hahn Ring 6, D-81739 Munich (Germany)
- Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna (Austria)
A comprehensive study of 20 keV B implantations into crystalline Si is presented. B has been implanted with doses between 10{sup 13} and 10{sup 16} cm{sup {minus}2} along the three channeling directions [110], [100], and [211] and parallel to (111) planes. In addition, implantations into (100)- and (110)-Si have been performed with tilt angles of 7{degree} and 38{degree}, respectively. The doping profiles have been measured with secondary ion mass spectroscopy. The experimental results are analyzed by Monte Carlo simulations using different models of lattice damage, thermal vibrations, and interatomic potentials. It is found that both the random interstitial and the split {l_angle}110{r_angle} interstitial model are adequate to describe the experimental dopant profiles, but not the tetrahedral interstitial model. Debye temperatures of 450 and 490 K both yield good results, but not 645 K. Finally, using the specific B{endash}Si Ziegler{endash}Biersack{endash}Littmark (ZBL) potential or the universal ZBL potential makes little difference in most cases, but the specific B{endash}Si clearly has to be preferred to obtain accurate [110] channeling profiles. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 279561
- Report Number(s):
- CONF-9503253-; ISSN 0734-211X; TRN: 96:023403
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 1; Conference: 3. international workshop on the measurement and characterization of ultra-shallow doping profiles in semiconductors, Triangle Park, NC (United States), 20-22 Mar 1995; Other Information: PBD: Jan 1996
- Country of Publication:
- United States
- Language:
- English
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