Comparison of various GaAs materials used for gamma-ray pulses characterization

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.507068· OSTI ID:277672

Foulon, F; Bergonzo, P; Pochet, T ^[1]; Brullot, B; Rubbelynck, C ^[2]

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1. DEIN/SPE-CEA/Saclay, Gif-sur-Yvette (France)
2. Centre d`Etudes Nucleaires, Bruyeres-le-Chatel (France)

Gallium arsenide resistive photoconductors are widely used for the characterization of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. The authors have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics : response time and sensitivity, were tested both before and after pre-irradiation with fission neutron as integrated doses in the range 5 {times} 10{sup 14} to 1 {times} 10{sup 16} neutrons/cm{sup 2}. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 {times} 10{sup 15} neutrons/cm{sup 2}.

• OSTI ID: 277672
• Report Number(s): CONF-951073-; ISSN 0018-9499; TRN: 96:018125
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 43, Issue 3Pt2; Conference: IEEE nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 21-28 Oct 1995; Other Information: PBD: Jun 1996
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
36 MATERIALS SCIENCE
PHOTOCONDUCTORS
PHYSICAL RADIATION EFFECTS
GALLIUM ARSENIDES
EXPERIMENTAL DATA
TIME DEPENDENCE
PHYSICAL PROPERTIES
GAMMA DETECTION
RESPONSE FUNCTIONS
RADIATION DOSES
CARRIER LIFETIME
RADIATION DETECTORS